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Recently, the radio circuit unit of mobile phones and smartphones increases their power consumption to support high-speed data communications (HSPA, LTE, etc.), therefore requiring lower-power components. Panasonic's power amplifiers for handset (PA) modules achieve low power consumption with the BiFET(*1) technology, reducing the power of radio circuit unit.
*1 Panasonic's original device structure that allows HFET (Hetero FET) and HBT (Hetero BT) to be integrated into a single chip.
Following is the each frequency band cover image figure. (Numbers in the figure are band names.)
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Related Products by Applications.
|*1||When all of the six substances prohibited in the EU's RoHS directive(2011/65/EU) are present below a concentration of the specified limit, we describe the applicable products as "RoHS compliant", and when any one of the substances is present above or equal to the limit (for all applications except for the exempted ones), we describe them as "RoHS not compliant".For more information, see the "Letter for the Certificate of Compliance to EU RoHS Directive". For the products with "-" mark, please contact us.|
|*2||With regard to the 169 substances listed on the ECHA candidate list updated on June 20th, 2016, when any one of the SVHCs is present in applicable products above a concentration of 0.1wt%, we describe them as "SVHC included", and when all SVHCs are present below or equal to 0.1wt%, we describe them as "SVHC not included", based on the information of SVHC provided by our supplier and the information of parts/materials used in applicable products.|
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