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GaN Power Devices


X-GaN Wafer Photo

Information

May 13, 2016
[Exhibition]  PCIM(Power Conversion Intelligent Motion 2016)@ Germany : Exhibited
Apr 20, 2016
[News]  GaN power devices and evaluation boards are now available for purchase online.
Feb 23, 2016
[Exhibition]  APEC 2016 (March/20-24/2016 @ Long Beach Convention & Entertainment Center): Exhibiting
Nov 19, 2015
[News]  Panasonic GaN transistor(X-GaN™) is exhibited in NEDO Forum for energy saving
Nov 12, 2015
[News]  Winning Best Paper Award in ISPSD2015
Oct 16, 2015
[Renewed Page]  Development story of new generation power device 'X-GaN' :Posted
Oct 16, 2015
[News]  ActiveLink's POWERLOADER, which uses X-GaN, boosted the pit works in SUZUKA 8 hours endurance road race
May 18, 2015
[Product]  Panasonic to Launch Industry's Smallest Enhancement-Mode 600V GaN Power Transistors Package
Apr 15, 2015
[Exhibition]  PCIM 2015 (2015/May/19-21 @ Messe Nuremberg, Germany): Exhibiting
Apr 15, 2015
[News]  Infineon and Panasonic Will Establish Dual Sourcing for Normally-Off 600V GaN Power Devices
Mar 10, 2015
[Exhibition]  APEC 2015 (2015/March/15-19 @ Charlotte Convention Center): Exhibiting
May 16, 2014
[Exhibition]  PCIM Europe 2014 (May 20-22, 2014 @ Exhibition Centre Nuremberg): Exhibiting
Mar 18, 2014
[Exhibition]  APEC 2014 (March 16-20, 2014 @ Fort Worth Convention Center): Exhibiting
Feb 25, 2014
[Exhibition]  Virtual Exhibition about embedded world 2014 is held.
Jan 27, 2014
[Exhibition]  embedded world 2014 (February 25-27, 2014 @ Exhibition Centre Nuremberg): Exhibiting
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What is GaN?

With various environmental issues, the depletion of oil resources, limited source of energy, etc., energy saving became a worldwide priority. The role of power supplies of electrical systems in energy conservation is rapidly becoming an important part of the solution.
Power devices used in electrical energy conversion and control systems that consume tremendous amount of power during operations are especially regarded as the key devices to "save energy" It is therefore important to optimize the efficiency of these devices to minimize energy loss during their operation.

Power devices have two contributors of energy loss

  1. "Conduction loss" that is due to the resistance in the device current loop.
  2. "Switching loss" that occurs during the transition between "On" and "Off" states.

In order to reduce these energy losses, it is necessary to "Reduce the resistance of the device current loop" and "Improve the switching speed".

GaN has the potential to reduce energy loss of the power devices. "GaN (gallium nitride)", a compound of Ga (Gallium) and N (Nitrogen), possesses high breakdown voltage and low conduction resistance characteristics that enable high-speed switching and miniaturization. Unlike conventional Si transistors that require bigger chip area to reduce on-resistance, GaN devices having small sizes (i.e. low parasitic capacitance) allow high speed switching and miniaturization with ease.

What is GaN

GaN is the next generation power device able to minimize power loss and achieve high-speed switching with the following characteristics:

  • Miniaturization
  • High breakdown voltage
  • High-speed switching
What is GaN? Expectations for the power electronics market -Part 2-
(Click the preview image to watch the movie.)
Click here to watch whole story.

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GaN Properties and Characteristics

The special features of GaN such as high voltage potential, ease of miniaturization and high-speed switching, enable GaN to achieve high breakdown voltage and low conduction resistance.

The "high breakdown voltage" is achieved because GaN has a wide band gap property. Band-gap is a region formed on the junction of materials where no electron exists. GaN has a band-gap wider than that of an Si. This enable GaN to achieve higher breakdown voltage than Si. With smaller size than Si devices at the same voltage breakdown, GaN devices allow miniaturization more than Si devices. Also, miniaturization reduces its parasitic capacitance that in turn improves its switching speed.

The "low conduction resistance" is achieved because the on-resistance of the power device is inversely proportional to the cube of the electrical breakdown. In other words, it is expected that GaN devices will have an on-resistance approximately 3 digits lower than the limit of that of Si devices theoretically. In addition, GaN devices have high electron saturation velocity that makes it suitable for high-speed applications.

Properties

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Practical use of X-GaN

There are following issues for becoming practical use of GaN transistor.

  • Normally-off characteristics
  • Control current collapse

We succeeded in solving these issues by its own technology

1. Normally-off

Current GaN devices have normally-on characteristics, it means between source and drain is on when no voltage on gate. For stopping current, the negative voltage should be add to the gate.
When gate is out of control, the current is through and system may be destroyed. It is very danger for using the system.
It is necessary to be same as current silicon transistor which are no current when gate voltage is 0 volt.

We make normally-off by using P type GaN on the gate and discharge in the channel under the gate.

Normally-off can be made to reduce the number of electrons in the transistor and modified the gate structure.
But we use above new technology. This method also make "reducing the ON resistance of the transistor" and "normally-off".

12

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2. Current collapse

Current collapse is increasing ON resistance by electrons are trapped in near the channel when high voltage, Continue this state a long time, the device is too heat and it may make malfunction or destruction.
In this case, it is necessary to design with enough margin not to have current collapse.

Panasonic develops the technology which is P type GaN is made near the drain and add holes from it and disappear the electrons when high voltage.

This method solves current collapse problems for GaN Devices and made no current collapse up to 850V.

12

The birth of X-GaN (obstacles and solutions) -Part 3-
(Click the preview image to watch the movie.)
Click here to watch whole story.

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Applications

GaN power devices are the next generation power devices capable of achieving "very low resistance of the device current loop" and "High-speed switching".
These properties could be used effectively for high-efficiency power supplies, HEV/EVs, or PV inverters.

The GaN power devices can be applied to some of the following examples:

  • Power supplies for server and other IT equipments, which support the increasing information data processing
  • High-efficiency and stable power supplies that use natural energy
  • Rapidly expanding HEV/EV devices.
  • etc.

Panasonic developed GaN power devices with high efficiency, low heat generation, and small size suitable for different applications such as power supplies, HEV/EV, and PV inverter and many others.

Applications

X-GaN application and its future -Part 4-
(Click the preview image to watch the movie.)
Click here to watch whole story.

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Roadmap


Roadmap

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Sample & Buy

■ Sample & Buy Online

  • Mouser
GaN Power Devices (X-GaN™) are now available for purchase online. Place Order
"X-GaN" power transistor devices and gate driver (AN34092B) are ES sample and can be used for "Technical Evaluation" only.
If you would like to use these devices for your mass production, you should contact us.


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Technical Support

Technical information and support for our products and their use.


■ Technical Support System (Registered users only)

  • Semiconductor Support System
Expert engineers respond to your inquiries as soon as possible.
Pre-registration is required to login.
After login to this system, proceed to "Contact Us" in "Related menu".

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Sales Inquiry



  • Sales Offices
Our sales offices are listed.
If you have any questions or need more information about our products, please contact us.

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*1 When all of the six substances prohibited in the EU's RoHS directive(2011/65/EU) are present below a concentration of the specified limit, we describe the applicable products as "RoHS compliant", and when any one of the substances is present above or equal to the limit (for all applications except for the exempted ones), we describe them as "RoHS not compliant".For more information, see the "Letter for the Certificate of Compliance to EU RoHS Directive". For the products with "-" mark, please contact us.
*2 With regard to the 169 substances listed on the ECHA candidate list updated on June 20th, 2016, when any one of the SVHCs is present in applicable products above a concentration of 0.1wt%, we describe them as "SVHC included", and when all SVHCs are present below or equal to 0.1wt%, we describe them as "SVHC not included", based on the information of SVHC provided by our supplier and the information of parts/materials used in applicable products.

 *3 "X-GaN" power transistor ES samples can be used for "Technical Evaluation" only.
   If you would like to use these devices for your mass production, you should contact us.

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Related Products


AN34092B

 Single-channel high-speed gate driver for "X-GaN" power transistor
 AN34092B


 Gate driver AN34092B has the functions which are "Constant source current for turn ON" and "Adjustable negative voltage source".
 It makes to control "X-GaN" driver with a few external device and your design easily.

 More information, please click here

 Place Order ⇒ Icon

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Evaluation tool and boards



SDK-Lineup


Web Simulation tool (PowerEsim)


 PowerESim

  • Panasonic helps you get right design reference by X-GaN preliminary simulator for specific topology.
    Totem Pole PFC is one of the suite topology for GaN to achieve above 99% efficiency.

  Click Here ⇒ Login



Spice Models


Spice Models

  • X-GaN™ Spice Models are able to be DownLoad from Technical Support System.

  Download ⇒ Technical Support System



Summary of Evaluation Board

Note Availability
Chopper Board DFN 10A This board is the evaluation board for the switching characteristics of a GaN power transistor with "X-GaN" driver
PGA26E19BA-SWEVB006 New!

  ·GaN Device :                     PGA26E19BA
  ·Gate Driver :                      AN34092B ES
  ·Maximum input voltage :    DC 400V

  ...Get more information ⇒ IconTechnical Support System

Available

Place Order⇒ Icon

Half Bridge Board Half bridge evaluation board for the switching characteristics of a GaN power transistor with "X-GaN" driver
PGA26E07BA-SWEVB007 New!

  ·GaN Device :                     PGA26E07BA
  ·Gate Driver :                      AN34092B ES
  ·Maximum input voltage :    DC 400V
  ·Drain current :                    15A

  ...Get more information ⇒ IconTechnical Support System

Build-to-order
Half Bridge Board Half bridge evaluation board for the switching characteristics of a GaN power transistor with "X-GaN" driver
PGA26E19BA-SWEVB007 New!

  ·GaN Device :                     PGA26E19BA
  ·Gate Driver :                      AN34092B ES
  ·Maximum input voltage :    DC 400V
  ·Drain current :                    10A

  ...Get more information ⇒ IconTechnical Support System

Build-to-order
Chopper Board DFN 10A This board is the evaluation board for measuring the switching characteristics of the GaN power transistor at turn-on and turn-off.
PGA26E07BA-SWEVB002 New!

  ·GaN Device :                     PGA26E07BA
  ·Maximum input voltage :    DC 400V
  ·Hi speed switching:     (dV/dt:200V/ns)

  ...Get more information ⇒ IconTechnical Support System

Build-to-order
Chopper Board TO220 This board is the evaluation board for measuring the switching characteristics of a GaN power transistor at turn-on and turn-off.
  ·Maximum input voltage:   DC 400V
  ·Evaluation board for switching characteristics with an inductive load.

  ...Get more information ⇒ IconTechnical Support System

Available

Place Order⇒ Icon

Daughter Board You can evaluate GaN performance easily on the existing application board to replacing from conventional switching device to this daughter board. An appropriate GaN driver on the board.
  ·You connect only power supply and Gate signal pulse for this daughter board and can get proper GaN-Tr performance.

  ...Get more information ⇒ IconTechnical Support System

Available (Limited stock)
LLC1 Board This is GaN performance Board with 1MHz operation capability.
  ·Input voltage:    DC 380V
  ·Output voltage:   DC 246V
  ·Output current:    3.7A
  ·Switching frequency 1.042MHz
Build-to-order
LLC2 Board This board is a Full Bridge LLC resonant DC/DC converter, which utilizes GaN-Tr for implementation and is intended to evaluate the GaN-Tr for the feasibility study before the engineering verification test.
  ·Input voltage:    DC 380V
  ·Output voltage:   DC 48V
  ·Output current:   20.8A
  ·Switching frequency:   320kHz

  ...Get more information ⇒ IconTechnical Support System

Build-to-order
TotemPole PFC Board This board is a Totem-Pole Bridgeless PFC, which utilizes GaN-Tr for implementation and is intended to evaluate the GaN-Tr for the feasibility study before the engineering verification test.
  ·Input voltage    AC 200V-260V
  ·Output voltage   DC 380V
  ·Output power   1200W
  ·Switching frequency  100kHz (fixed)

  ...Get more information ⇒ IconTechnical Support System

Build-to-order

Concept Demo

Compact Board

ALL-IN-ONE POWER SUPPLY
  • Power Density 30 W/in3 (1.83 W/cm3)

  ...Get more information ⇒ IconTechnical Support System









Reliability Information

*TO-220D PKG

Test Items Test Conditions item 1 Test Standard Evaluation quality Result
THB Tj=85C, RH=85%, Vds=480V, 1000h JEDEC
JESD22-A101
45 pcs × 3 lot PASS
HTRB Tj=150C, Vds=480V, 1000h JEDEC
JESD22-A108
45 pcs × 3 lot PASS
HTRB_G+ Tj=150C,Vgs=+4V, 1000h JEDEC
JESD22-A108
45 pcs × 3 lot PASS
HTRB_G- Tj=150C, Vgs=-12V, 1000h JEDEC
JESD22-A108
45 pcs × 3 lot PASS
HTS Tj=150C, 1000h JEDEC
JESD22-A103
45 pcs × 3 lot PASS
Intermittent Operation Test Tj=25C, ⊿Tj=100C, 2500cyc
1cyc:on/off=2min/2min
MIL-STD-750
Method 1037
15 pcs × 3 lot PASS
Temperature Cycling Test* -55C~150C,100cyc
1cyc:-55C(30min)→normal temp.(5min)→ 150C(30min)→normal temp.(5min)
JEDEC
JESD22-A104
45 pcs × 3 lot PASS
Solder Heat Resistance Test T=270±5C, t=10±1s JEDEC
JESD22-A113
45 pcs × 3 lot PASS
ESD Test (HBM) C=100pF, R=1.5kohm, ±1000V JEDEC
JS-001
3pcs each
 × 3 lot
PASS

* After Solder Heat Resistance Test









Sample & Buy

■ Sample & Buy Online

  • Mouser
GaN Power Devices (X-GaN™) are now available for purchase online. Place Order
"X-GaN" power transistor devices and gate driver (AN34092B) are ES sample and can be used for "Technical Evaluation" only.
If you would like to use these devices for your mass production, you should contact us.


Return to Top


Technical Support

Technical information and support for our products and their use.


■ Technical Support System (Registered users only)

  • Semiconductor Support System
Expert engineers respond to your inquiries as soon as possible.
Pre-registration is required to login.
After login to this system, proceed to "Contact Us" in "Related menu".

Return to Top

Sales Inquiry



  • Sales Offices
Our sales offices are listed.
If you have any questions or need more information about our products, please contact us.

Return to Top

SUZUKA 8 hours endurance road race

X-GaN Movie
Panasonic's new generation power device, X-GaN
Whole Story:
Panasonic's new generation power device, "X-GaN"
X-GaN Power Assist Suit at the Suzuka Circuit
Part 1:
X-GaN Power Assist Suit at the Suzuka Circuit
What is GaN? Expectations for the power electronics market
Part 2:
What is GaN? Expectations for the power electronics market
The birth of X-GaN (obstacles and solutions)
Part 3:
The birth of X-GaN (obstacles and solutions)
The birth of X-GaN (obstacles and solutions)
Part 4:
X-GaN application and its future

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GaN in the Exhibition

PCIM 2016

X-GaN Panasonic Gallium Nitride solutions at PCIM

APEC 2016

APEC 2016 was held in Long Beach , California, United States of America at March 20-24, 2016.

APEC 2016 X-GaN Power Solution
Interview 1:
APEC 2016 X-GaN Power Solution
APEC 2016 X-GaN Power Adapter
Interview 2:
APEC 2016 X-GaN Power Adapter

APEC 2015

APEC 2015 was held in Charlotte, North Carolina, United States of America at March 15-19, 2015.

PCIM 2014

PCIM (Power Conversion Intelligent Motion) is Europe's leading meeting-point for specialists in Power Electronics and its applications in Intelligent Motion, Renewable Energy and Energy Management.

From 20th - 22nd May 2014, the industry's key international players met in Nuremberg.Get up-to-the-minute information on the newest trends and developments as well as state of the art solutions for your most challenging problems.

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