Small Surface-Mount type (IF=1A and more)

From 30 to 60V/1 to 5A Middle power Schottky barrier diodes

Overview

Schottky barrier diodes  This product is a schottky barrier diode (SBD) with fine diffusion process. Adding to the existing small signal lineups, we have developed the middle power products. By adopting the fine diffusion process and JBS structure*, we have achieved the low FV, low IR characteristic to contribute to increase in efficiency of the set as TV and PC with a little element loss. This product package (TMiniP2-F2-B, Mini2-F3-B) is a thin package to contribute to save space of the set.
* Junction Barrier Schottky

Features

Applications

Main characteristics (Ta=25°C) (Tentative)

Part Number Reverse voltage
VR (V)
Forward current
IF (A)
Forward voltage*
VF max. (V)
  Reverse current*
IR max. (µA)
  Package Development
Schedule (ES)
IF (A) VR (V)
DB24301 30 2 0.39 2 1300 30 TMiniP2-F2-B
(3.8 × 2.4 × 0.85)
November, 2011
DB24305 30 3 0.45 3 300 30 December, 2011
DB24312 30 5 0.51 5 300 30 November, 2011
DB24401 40 1 0.39 1 250 40 December, 2011
DB24402 40 2 0.47 2 250 40 December, 2011
DB24403 40 3 0.54 3 250 40 November, 2011
DB24405 40 3 0.44 3 2400 40 November, 2011
DB24605 60 1 0.45 1 350 60 November, 2011
DB24606 60 3 0.70 3 350 60 November, 2011
DB2W401 40 1 0.39 1 250 40 Mini2-F3-B
(2.6 × 1.6 × 0.80)
December, 2011
DB2W402 40 2 0.47 2 250 40 December, 2011
DB2W403 40 3 0.54 3 250 40 November, 2011
  * Specifications and development schedule are target values.

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