Year 2007

Information Released to Mass Media and Journalists

The information of the news releases is accurate at the time of publication.
Please note that these documents may not be accord with the most up-to-date information.

2007

 Dec.12

• Panasonic Develops a Gallium Nitride (GaN) Power Transistor with Ultra High Breakdown Voltage over 10000V

 Oct.10

• Panasonic starts to sell a New-generation UniPhier System LSI

 Oct.2

• Panasonic Achieves the World-first Application of 45-nm System LSI Technology into Consumer Electronics

 Jun.19

• Panasonic Now Mass-Produces World-First 45-nm System LSIs

 May.17

• Panasonic Develops New MEMS Microphone with Low Profile and High Heat Resistance

 May.15

• Panasonic Holds An Official Opening Ceremony Of its Semiconductor Factory in Suzhou, China

 May.14

• Panasonic develops a next-generation robust image sensor

 Apr.19

• Monthly Output of Dual-wavelength High-power Laser Rises to 10Million Units in FY'07

 Mar.2

• Panasonic develops White Color Power LEDs with the Highest Output in the industry by employing GaN Substrates

 Feb.13

• Renesas Technology and Matsushita Develop Technique for Stablizing the Operation of On-Chip SRAM Manufactured with 45nm Process Generation Bulk CMOS