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Winning Best Paper Award in ISPSD2015

10th September 2015

In ISPSD(International Symposium on Power Semiconductor Devices and ICs) which is one of most prestigious international society in the power semiconductor ( 11th-14th May in Hong Kong), The papers for Panasonic's GaN power semiconductor was got award from 218 papers which are written by top-level researchers of company and research institutions in world-wide.

Mr. Kaneko who presented at the society
Mr. Kaneko who presented at the society
Panasonicís HD-GIT which solves current collapse
Panasonicís HD-GIT which solves current collapse

This papers are written about solving Current collapse which is issue of GaN devices.
Current collapse is increasing ON resistance by electrons are trapped in near the channel when high voltage, it may make malfunction or destruction of power set.
Panasonic develops the technology which is P type GaN is made near the drain and add holes from it and disappear the electrons when high voltage

--Technical issues can be referred by How2Power --

[Mr Kanaeko's comment]

I honor to contribute to solve the problem which interferes practical use for GaN power devices and get high evaluation from society. This technology can be developed by many years of experience of know-how of the compounds and micro-fabrication technology for silicon. by a further technological improvements, I would like to develop innovative compact and energy-saving equipment .

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